Sciences & technologie. A, sciences exactes
Volume 0, Numéro 24, Pages 21-24
2006-12-31

A Numerical Model To Determine The Diffusion Length By Ebic Method. Study Of Si Case



Authors : Elateche Z . Nouiri A .

Abstract

ilicon is a very important material used in solar cells fabrication. The characterization of semiconductors by a scanning electron microscopy (SEM) using techniques like electron beam induced current (EBIC) and cathodoluminescence (CL) is of great interest. Nowadays Monte Carlo (MC) method becomes a very important tool to simulate the diffusion length. In this work, we propose a new Monte Carlo calculation of electron depth and energy dissipation in silicon. Our results are compared with other analytical analysis. Concerning the electron depth, there is a good agreement with other models, in particular at low beam energy.

Keywords

EBIC techniques, diffusion length, Calculation, Silicon

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