New Optimization Nanotechnology Structures CNTFET

Benbouza, M. S.; Hocine, D.; Zid, Y.; Benbouza, A.

International journal of electronic and electrical engineering systems
Volume 1, Numéro 3, Pages 29-32
2018-09-30

New Optimization Nanotechnology Structures Cntfet

Authors : Benbouza M. S. . Hocine D. . Zid Y. . Benbouza A. .

Abstract

The high frequency properties of CNTs (Nano Tube Carbon) are very interesting because of their extraordinary structure, electrical and mechanical. They offer good electrical properties such as high conductivity. The conductivity value of single-walled NTC conductors is 70 times higher than that of copper. For semiconductors, load mobility values greater than 10/Vs for amorphous silicon used in the electronics industry. The current density greater than 10 5 2 cm /Vs compared to 1500 cm 2 . As a result, the impedance of an NTC structure can be considered as a function of the diameter and length of the nanotube and the internal physical parameters. Such structures in electronics don’t use the basic components such as resistors, capacitors and coils but active elements such as NTC transistors. In this article, we will present new structures based on nanotubecarbon transistors CNTFET that offer low energy consumption, and we compare them with classical active structures.