Journal of Materials, Processes and Environment

Study And Characterization Of Multi-crystalline Silicon Ingot

Auteurs : Kerkar Fouad .

Résumé

The multi-crystalline silicon (mc-Si) produced with directional solidification is still dominating the photovoltaic industry. It is the best way to get high solar cell efficiencies with low production cost. The quality of wafers produced affects directly the conversion efficiency of obtained solar cell. The multi-crystalline silicon ingot is grown by extract Heat from the bottom of the crucible by opening the insulation and move down the heat exchanger block from the heat zone (HEM). Therefore, the solid-liquid interface moves upwards from the bottom to top of the crucible. The growth rate is controlled to favor the growth of a high quality crystal structure by adjusting the position of the crucible and the heater power. The goal is to obtain vertically aligned grains which indicate good directional growth. In this paper, the wafer quality will be mainly studied by the lifetime variation of minority carries and resistivity as a function of wafer position. This analysis was investigated using a quasi-stationary photo conductance QSSPC technique. The ingot produced with HEM technic has shown the good uniform large grain cm-size with vertically-oriented grain boundaries.

Mots clés

Multi-crystalline silicon, directional solidification, Heat exchange method